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說明

These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity.

The 3-state control gate is a 2-input AND gate with active-low inputs so if either output-enable ( or ) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.

The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C.

特性

• BiCMOS Design Substantially Reduces I_CCZ
• Output Ports Have Equivalent 25- Resistors; No External Resistors Are Required
• Specifically Designed to Drive MOS DRAMs
• 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
• Flow-Through Architecture Optimizes PCB Layout
• Power-Up High-Impedance State
• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
• Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)