PBRN123E
1.1 General description
800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped
Transistors (RET) family in small plastic packages.
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
1.3 Applications
1.4 Quick reference data
PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW
Rev. 01 — 27 February 2007 Product data sheet
Table 1. Product overview
Type number Package
NXP JEITA JEDEC
PBRN123EK SOT346 SC-59A TO-236
PBRN123ES[1] SOT54 SC-43A TO-92
PBRN123ET SOT23 - TO-236AB
n 800 mA output current capability n Low collector-emitter saturation voltage
VCEsat
n High current gain hFE n Reduces component count
n Built-in bias resistors n Reduces pick and place costs
n Simplifies circuit design n ±10 % resistor ratio tolerance
n Digital application in automotive and
industrial segments
n Switching loads
n Medium current peripheral driver
