IS67WV51216DBLL
F EAT URES
• High-speed access time:
– 70ns (IS66WV51216DALL, IS66/67WV51216DBLL)
– 55ns (IS66/67WV51216DBLL)
• CMOS low power operation
• Single power supply
– Vdd = 1.7V-1.95V (IS66WV51216DALL)
– Vdd = 2.5V-3.6V (IS66/67WV51216DBLL)
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
DESCRIPTION
The ISSI IS66WV51216DALL and IS66/67WV51216DBLL
are high-speed, 8M bit static RAMs organized as 512K
words by 16 bits. It is fabricated using ISSI's highperformance
CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is low
(deselected) or when CS1 is low , CS2 is high and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS66WV51216DALL and IS66/67WV51216DBLL are
packaged in the JEDEC standard 48-ball mini BGA (6mm
x 8mm) and 44-Pin TSOP (TYPE II). The device is aslo
available for die sales.
