IS64WV12816DBLS
FEATURES
HIGH SPEED: (IS61/64WV12816DALL/DBLL)
• High-speed access time: 8, 10, 12, 20 ns
• Low Active Power: 135 mW (typical)
• Low Standby Power: 12 μW (typical)
CMOS standby
LOW POWER: (IS61/64WV12816DALS/DBLS)
• High-speed access time: 25, 35 ns
• Low Active Power: 55 mW (typical)
• Low Standby Power: 12 μW (typical)
CMOS standby
• Single power supply
— VDD 1.65V to 2.2V (IS61WV12816DAxx)
— VDD 2.4V to 3.6V (IS61/64WV12816DBxx)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperature support
• Lead-free available
DESCRIPTION
The ISSI IS61WV12816DAxx/DBxx and IS64WV12816DBxx
are high-speed, 2,097,152-bit static RAMs organized as
131,072 words by 16 bits. It is fabricated using ISSI's highperformance
CMOS technology. This highly reliable process
coupled with innovative circuit design techniques,
yields high-performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61WV12816DAxx/DBxx and IS64WV12816DBxx are
packaged in the JEDEC standard 44-pin TSOP Type II and
48-pin Mini BGA (6mm x 8mm).
