IS61WV2568EDBLL
FEATURES
• High-speed access time: 8, 10 ns
• Low Active Power: 85 mW (typical)
• Low Standby Power: 7 mW (typical)
CMOS standby
• Single power supply
— Vdd 2.4V to 3.6V (10 ns)
— Vdd 3.3V ± 10% (8 ns)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial and Automotive temperature support
• Lead-free available
• Error Detection and Error Correction
DESCRIPTION
The ISSI IS61/64WV2568EDBLL is a high-speed,
2,097,152-bit static RAMs organized as 262,144 words by
8 bits. It is fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with innovative
circuit design techniques, yields high-performance
and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of
the memory.
The IS61/64WV2568EDBLL is packaged in the JEDEC
standard 44-pin TSOP-II, 36-pin SOJ and 36-pin Mini BGA
(6mm x 8mm).
