IS61LF12836EC
FEATURES
Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data and
control
Burst sequence control using MODE input
Three chip enable option for simple depth
expansion and address pipelining
Common data inputs and data outputs
Auto Power-down during deselect
Single cycle deselect
Snooze MODE for reduced-power standby
JEDEC 100-pin TQFP, 165-ball PBGA and
119-ball PBGA packages
Power supply:
LF: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)
VF: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%)
JTAG Boundary Scan for PBGA packages
Industrial and Automotive temperature support
Lead-free available
Error Detection and Error Correction
DESCRIPTION
The 4Mb product family features high-speed, lowpower
synchronous static RAMs designed to provide
burstable, high-performance memory for
communication and networking applications. The
IS61(64)LF/VF12836EC are organized as 131,072 words by
36bits. The IS61(64)LF/VF12832EC are organized as
131,072 words by 32bits. The IS61(64)LF/VF25618EC are
organized as 262,144 words by 18 bits. Fabricated with
ISSI's advanced CMOS technology, the device
integrates a 2-bit burst counter, high-speed SRAM
core, and high-drive capability outputs into a single
monolithic circuit. All synchronous inputs pass through
registers controlled by a positive-edge-triggered single
clock input.
Write cycles are internally self-timed and are initiated
by the rising edge of the clock input. Write cycles can
be one to four bytes wide as controlled by the write
control inputs.
Separate byte enables allow individual bytes to be
written. The byte write operation is performed by using
the byte write enable (/BWE) input combined with one
or more individual byte write signals (/BWx). In
addition, Global Write (/GW) is available for writing all
bytes at one time, regardless of the byte write controls.
Bursts can be initiated with either /ADSP (Address
Status Processor) or /ADSC (Address Status Cache
Controller) input pins. Subsequent burst addresses can
be generated internally and controlled by the /ADV
(burst address advance) input pin.
The mode pin is used to select the burst sequence
order. Linear burst is achieved when this pin is tied
LOW. Interleave burst is achieved when this pin is tied
HIGH or left floating.
