品牌索引
產品分類 > 小信號開關二極管> 瞬態電壓抑制器TVS/ESD> 雙極管二極管> 調諧二極管> 齊納(穩壓)二極管> 小信號肖特基二極管> 頻帶轉換二極管> 中/高功率管> 射頻PIN二極管> Sinterglass二極管> 整流器 > N溝道(N-Channel)> P溝道(P-Channel)> 雙N溝道(Dual N-Channel)> 雙P溝道(Dual P-Channel)> 雙N和P溝道(Dual N and P-Channel)
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產品介紹 FEATURES
• Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS (on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. |
