CY8C21345-12PVXET
Features
■ Automotive Electronics Council (AEC) Q100 qualified
■ Powerful Harvard-architecture processor
❐ M8C processor speeds up to 24 MHz
❐ 8 × 8 multiply, 32-bit accumulate
❐ Low power at high speed
❐ Automotive A-grade: 3.0 V to 5.25 V operation at –40 °C to
+85 °C temperature range
❐ Automotive E-grade: 4.75 V to 5.25 V operation at –40 °C to
+125 °C temperature range
■ Advanced peripherals (PSoC® blocks)
❐ Six analog Type ‘E’ PSoC blocks provide:
• Up to four comparators with digital-to-analog converters
(DAC) references
• Up to 10-bit single or dual analog-to-digital converters
(ADCs)
❐ Up to eight digital PSoC blocks provide:
• 8 to 32-bit timers, counters, and pulse width modulators
(PWMs)
• One-shot, multi-shot mode in timers and PWMs
• PWM with deadband in one digital block
• Shift register, cyclical redundancy check (CRC), and
pseudo random sequence (PRS) modules
• Full- or half-duplex UARTs
• SPI masters or slaves, 8- to 16-bit variable data length
• Connectable to all general-purpose I/O (GPIO) pins
❐ Complex peripherals by combining blocks
❐ Powerful synchronization support, analog module operations
can be synchronized by digital blocks or external signals.
■ High-speed 10-bit successive approximation register (SAR)
ADC with sample and hold optimized for embedded control
■ CY8C22345H devices Integrate Immersion® TouchSense®
Haptics Technology for ERM drive control
■ Precision, programmable clocking
❐ Internal oscillator up to 24 MHz
❐ High accuracy 24 MHz with optional 32-kHz crystal and
phase locked loop (PLL)
❐ Optional external oscillator, up to 24 MHz
❐ Internal low speed, low-power oscillator for watchdog and
sleep functionality
■ Flexible on-chip memory
❐ Up to 16 KB flash program storage, 1000 erase/write cycles
❐ Up to 1 KB SRAM data storage
❐ In-System Serial Programming (ISSP)
❐ Partial flash updates
❐ Flexible protection modes
❐ EEPROM emulation in flash
■ Optimized CapSense® resource
❐ Supports two CapSense channels with simultaneouS
