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二極管

USB

三極管

可控硅(晶閘管)

場(chǎng)效應(yīng)管(MOSFET)

集成電路

連接器

LED系列產(chǎn)品

電感器

繼電器

傳感器

電容器

電阻器

保護(hù)器件

光電器件

壓電晶體

開(kāi)關(guān)原件

功率模塊

CY7C1150KV18-400BZC

Features
■ 18-Mbit density (1 M × 18, 512 K × 36)
■ 450-MHz clock for high bandwidth
■ Two-word burst for reducing address bus frequency
■ Double data rate (DDR) interfaces (data transferred at
900 MHz) at 450 MHz
■ Available in 2.0 clock cycle latency
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■ Data valid pin (QVLD) to indicate valid data on the output
■ Synchronous internally self-timed writes
■ DDR II+ operates with 2.0 cycle read latency when DOFF is
asserted HIGH
■ Operates similar to DDR I device with one cycle read latency
when DOFF is asserted LOW
■ Core VDD = 1.8V ± 0.1 V; I/O VDDQ = 1.4 V to VDD
[1]
❐ Supports both 1.5 V and 1.8 V I/O supply
■ HSTL inputs and variable drive HSTL output buffers
■ Available in 165-ball FBGA package (13 x 15 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ JTAG 1149.1 compatible test access port
■ Phase-locked loop (PLL) for accurate data placement